Product Information

BFR520,215

BFR520,215 electronic component of NXP

Datasheet
RF Bipolar Transistors NPN 70MA 15V 9GHZ
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2457 ea
Line Total: USD 0.25

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.2457
5 : USD 0.2398
250 : USD 0.2247
1000 : USD 0.2164
2500 : USD 0.2141

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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Additional Infomation About Product

BFR520 NPN 9 GHz wideband transistor Rev. 4 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. 1.3 Applications RF front end wideband applications in the GHz range Analog and digital cellular telephones Cordless telephones (CT1, CT2, DECT, etc.) Radar detectors Pagers and satellite TV tuners (SATV) Repeater amplifiers in fiber-optic systems. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage - - 20 V CBO V collector-emitter R =0 --15 V CES BE voltage I collector current (DC) - - 70 mA C 1 P total power dissipation up to T =97 C - - 300 mW tot sp h DC current gain I =20mA V = 6 V 60 120 250 FE C CE C feedback capacitance I =i =0A V =6V -0.4 - pF re C c CB f=1MHz transition frequency I =20mA V =6V -9 - GHz f T C CE f=1GHz G maximum unilateral I =20mA V =6V UM C CE power gain T =25 C amb f = 900 MHz - 15 - dB f=2GHz - 9 - dB SOT23BFR520 NXP Semiconductors NPN 9 GHz wideband transistor Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit 2 s insertion power gain I =20mA V =6V 13 14 - dB 21 C CE T =25 C amb f=900MHz NF noise figure = T =25 C s opt amb I =5mA V =6V -1.1 1.6 dB C CE f=900MHz I =20mA V =6V -1.6 2.1 dB C CE f=900MHz I =5mA V =8V -1.9 - dB C CE f=2GHz 1 T is the temperature at the soldering point of the collector tab. sp 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1base 3 3 2emitter 3 collector 1 12 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFR520 - plastic surface mounted package 3 leads SOT23 4. Marking Table 4. Marking 1 Type number Marking code BFR520 32* 1 * = p: Made in Hong Kong * = t: Made in Malaysia * = W: Made in China. BFR520 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 13 September 2011 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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