BFR94A,215 NXP

BFR94A NPN 5 GHz wideband transistor Rev. 4 2 October 2014 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement; BFT92 1.2 Features and benefits High power gain Low noise figure Low intermodulation distortion AEC-Q101 qualified 1.3 Applications RF wideband amplifiers and oscillators 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage - - 20 V CBO V collector-emitter -- 15 V CEO voltage I collector current - - 25 mA C P total power dissipation T 95 C--300mW tot sp C feedback capacitance I =i =0mA; V =10V; -0.35- pF re C C CE f=1MHz f transition frequency I =15 mA; V =10V; -5 - GHz T C CE f=500MHz G unilateral power gain I =15 mA; V =10V; UM C CE T =25 C amb f=1GHz - 14 - dB f=2GHz - 8 - dB NF noise figure I =5 mA; V = 10V; f= 1GHz; -2.1 - dB C CE = ; T =25 C S opt amb V output voltage IMD = 60 dB; I =14mA; -150- mV O C V =10V; R =75 ; CE L f +f f = 793.25 MHz p q rBFR94A NXP Semiconductors NPN 5 GHz wideband transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base   2emitter 3 collector   PV\  3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFR94A - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking Type number Marking code Description BFR94A NL* * = p : made in Hong Kong * = w : made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Parameter Conditions Min Max Unit V collector-base voltage open emitter - 20 V CBO V collector-emitter voltage open base - 15 V CEO V emitter-base voltage open collector - 2 V EBO I collector current - 25 mA C [1] P total power dissipation T 95 C; see Figure 2 -300 mW tot sp T storage temperature 65 +150 C stg T junction temperature - +150 C j [1] T is the temperature at the solder point of the collector pin. sp BFR94A All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 4 2 October 2014 2 of 14