BFT25A,215 NXP

BFT25A NPN 5 GHz wideband transistor Rev. 5 12 September 2011 Product data sheet 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to2GHz. The transistor is encapsulated in a 3-pin plastic SOT23 envelope. 1.2 Features and benefits Low current consumption (100 A to 1 mA) Low noise figure Gold metallization ensures excellent reliability. 1.3 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base open emitter - - 8 V CBO voltage V collector-emitter open base - - 5 V CEO voltage DC collector -- 6.5 mA I C current 1 P total power up to T = 165 C -- 32 mW tot s dissipation h DC current gain I = 0.5 mA V = 1 V 50 80 200 FE C CE f transition I = 1 mA V = 1 V 3.5 5 - GHz T C CE frequency T =25 C amb f = 500 MHz G maximum I = 0.5 mA V = 1 V -15 -dB UM C CE unilateral power T = 25 C amb f= 1 GHz gain F noise figure = I = 0.5 mA -1.8 -dB opt C V = 1 V CE T =25 C f = 1 GHz amb = I = 1 mA -2 -dB opt C V = 1 V CE T =25 C f = 1 GHz amb 1 T is the temperature at the soldering point of the collector tab. s SOT23BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Symbol Code: V10 3 3 1base 2emitter 1 3 collector 12 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFT25A - plastic surface mounted package 3 leads SOT23 4. Marking Table 4. Marking 1 Type number Marking code BFT25A 34* 1 * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 8 V CBO V collector-emitter voltage open base - 5 V CEO V emitter-base voltage open collector - 2 V EBO I DC collector current - 6.5 mA C 1 P total power dissipation up to T =165 C -32 mW tot s T storage temperature 65 +150 C stg T junction temperature - 175 C j 1 T is the temperature at the soldering point of the collector tab. s BFT25A All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 12 September 2011 2 of 15