Product Information

BFT93,215

BFT93,215 electronic component of NXP

Datasheet
Transistors RF Bipolar PNP 12V 5GHZ
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 10
Multiples : 1
10 : USD 1.0376
100 : USD 0.7649
500 : USD 0.6405
1000 : USD 0.4607
5000 : USD 0.43
N/A

Obsolete
0 - WHS 2

MOQ : 3000
Multiples : 3000
3000 : USD 0.2777
N/A

Obsolete
0 - WHS 3

MOQ : 3000
Multiples : 3000
3000 : USD 0.4431
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1
1 : USD 0.894
10 : USD 0.7346
100 : USD 0.4747
1000 : USD 0.3805
3000 : USD 0.3638
9000 : USD 0.3638
24000 : USD 0.35
45000 : USD 0.3442
99000 : USD 0.3361
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Package / Case
Packaging
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Dc Collector Current
Dc Current Gain Hfe
Rf Transistor Case
No. Of Pins
Svhc
Associated Gain Ga
Continuous Collector Current Ic
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Gain Bandwidth Ft Typ
Hfe Min
No. Of Transistors
Noise Figure Typ
Operating Temperature Range
Smd Marking
Termination Type
Test Frequency
Transistor Case Style
Voltage Vcbo
LoadingGif

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification November 1992NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFT93 DESCRIPTION PINNING PNP transistor in a plastic SOT23 PIN DESCRIPTION envelope. Code: X1p It is primarily intended for use in RF 1base lfpage 3 wideband amplifiers, such as in aerial 2emitter amplifiers, radar systems, 3 collector oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high 12 power gain due to its very high Top view MSB003 transition frequency, it also has excellent wideband properties and low noise up to high frequencies. Fig.1 SOT23. NPN complements are BFR93 and BFR93A. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-base voltage open emitter 15 V CBO V collector-emitter voltage open base 12 V CEO I DC collector current 35 mA c P total power dissipation up to T =95 C note 1 300 mW tot s f transition frequency I = 30 mA V = 5 V f = 500 MHz 5 GHz T C CE T =25 C j C feedback capacitance I = 2mA V = 5V f = 1 MHz 1 pF re C CE G maximum unilateral power gain I = 30 mA V = 5 V f = 500 MHz 16.5 dB UM C CE T =25 C amb Fnoise figure I = 10 mA V = 5 V f = 500 MHz 2.4 dB C CE T =25 C amb V output voltage d = 60 dB I = 30 mA 300 mV o im C V = 5 V R =75 CE L f = 493.25 MHz (pqr) Note 1. T is the temperature at the soldering point of the collector tab. s November 1992 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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