Product Information

BFU520AVL

BFU520AVL electronic component of NXP

Datasheet
RF Bipolar Transistors NPN wideband silicon RF transistor

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5966 ea
Line Total: USD 0.5966

9676 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5229 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1
1 : USD 0.4474
10 : USD 0.3703
100 : USD 0.253
1000 : USD 0.1518
2500 : USD 0.1414
10000 : USD 0.1254
20000 : USD 0.1208
50000 : USD 0.1196
100000 : USD 0.115

     
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Product Category
RoHS - XON
Icon ROHS
Technology
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Cnhts
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Mxhts
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BFU520A 7 2 6 NPN wideband silicon RF transistor Rev. 1 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NF ) = 0.7 dB at 900 MHz min Maximum stable gain 18 dB at 900 MHz 11 GHz f silicon technology T 1.3 Applications Applications requiring high supply voltages and high breakdown voltages Broadband amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit collector-base voltage open emitter - - 24 V V CB collector-emitter voltage open base - - 12 V V CE shorted base - - 24 V emitter-base voltage open collector - - 2 V V EB collector current - 5 30 mA I C 1 total power dissipation T 87 C -- 450 mW P tot sp DC current gain I =5 mA V =8V 60 95 200 h FE C CE collector capacitance V =8V f = 1MHz - 0.53 - pF C c CB transition frequency I =10 mA V = 8 V f = 900 MHz - 10 - GHz f T C CEBFU520A NXP Semiconductors NPN wideband silicon RF transistor Table 1. Quick reference data continued T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit 2 G maximum power gain I =5 mA V = 8 V f = 900 MHz -18 - dB p(max) C CE NF minimum noise figure I =1 mA V = 8 V f = 900 MHz = -0.7 - dB min C CE S opt P output power at 1 dB gain I =10 mA V =8V Z =Z =50 -7.0 - dBm L(1dB) C CE S L compression f=900MHz 1 T is the temperature at the solder point of the collector lead. sp 2 If K > 1 then G is the maximum power gain. If K 1 then G =MSG. p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1base 2emitter 3 collector DDD 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU520A - plastic surface-mounted package 3 leads SOT23 1 - OM7961 - Customer evaluation kit for BFU520A, BFU530A and BFU550A 1 The customer evaluation kit contains the following: a) Unpopulated RF amplifier Printed-Circuit Board (PCB) b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB) d) BFU520A, BFU530A and BFU550A samples e) USB stick with data sheets, application notes, models, S-parameter and noise files 4. Marking Table 4. Marking Type number Marking Description BFU520A HZ* * = t : made in Malaysia * = w : made in China BFU520A All information provided in this document is subject to legal disclaimers. NXP B.V. 2014. All rights reserved. Product data sheet Rev. 1 13 January 2014 2 of 22

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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