BFT93W,115 NXP

BFT93W,115 electronic component of NXP
BFT93W,115 NXP
BFT93W,115 RF Bipolar Transistors
BFT93W,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BFT93W,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFT93W,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

Part No. BFT93W,115
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar PNP 12V 50mA 4GHZ
Datasheet: BFT93W,115 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7276
10$ 0.5988
100$ 0.386
1000$ 0.3091
3000$ 0.3034
9000$ 0.3034
24000$ 0.2922
45000$ 0.2877
99000$ 0.2809
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Type
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
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Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFT93W,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFT93W,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification March 1994 Supersedes data of November 1992NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION High power gain Silicon PNP transistor in a plastic, 3 handbook, 2 columns SOT323 (S-mini) package. The Gold metallization ensures BFT93W uses the same crystal as the excellent reliability SOT23 version, BFT93. SOT323 (S-mini) package. 12 PINNING APPLICATIONS MBC870 Top view PIN DESCRIPTION It is intended as a general purpose 1base transistor for wideband applications BFT93W Marking code: X1. up to 2 GHz. 2emitter Fig.1 SOT323. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 15 V CBO V collector-emitter voltage open base 12 V CEO I collector current (DC) 50 mA C P total power dissipation up to T =93 C note 1 300 mW tot s h DC current gain I = 30 mA V = 5 V 20 50 FE C CE C feedback capacitance I =0 V = 5V f=1 MHz 1 pF re C CE f transition frequency I = 30 mA V = 5V 4 GHz T C CE f = 500 MHz G maximum unilateral power gain I = 30 mA V = 5V 15.5 dB UM C CE f = 500 MHz T =25 C amb F noise figure I = 10 mA V = 5V 2.4 dB C CE f = 500 MHz T junction temperature 150 C j Note 1. T is the temperature at the soldering point of the collector pin. s March 1994 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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