BFT93W,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification March 1994 Supersedes data of November 1992NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION High power gain Silicon PNP transistor in a plastic, 3 handbook, 2 columns SOT323 (S-mini) package. The Gold metallization ensures BFT93W uses the same crystal as the excellent reliability SOT23 version, BFT93. SOT323 (S-mini) package. 12 PINNING APPLICATIONS MBC870 Top view PIN DESCRIPTION It is intended as a general purpose 1base transistor for wideband applications BFT93W Marking code: X1. up to 2 GHz. 2emitter Fig.1 SOT323. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 15 V CBO V collector-emitter voltage open base 12 V CEO I collector current (DC) 50 mA C P total power dissipation up to T =93 C note 1 300 mW tot s h DC current gain I = 30 mA V = 5 V 20 50 FE C CE C feedback capacitance I =0 V = 5V f=1 MHz 1 pF re C CE f transition frequency I = 30 mA V = 5V 4 GHz T C CE f = 500 MHz G maximum unilateral power gain I = 30 mA V = 5V 15.5 dB UM C CE f = 500 MHz T =25 C amb F noise figure I = 10 mA V = 5V 2.4 dB C CE f = 500 MHz T junction temperature 150 C j Note 1. T is the temperature at the soldering point of the collector pin. s March 1994 2