Product Information

BFT93W,115

BFT93W,115 electronic component of NXP

Datasheet
Transistors RF Bipolar PNP 12V 50mA 4GHZ
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.7276
10 : USD 0.5988
100 : USD 0.386
1000 : USD 0.3091
3000 : USD 0.3034
9000 : USD 0.3034
24000 : USD 0.2922
45000 : USD 0.2877
99000 : USD 0.2809
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Type
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification March 1994 Supersedes data of November 1992NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION High power gain Silicon PNP transistor in a plastic, 3 handbook, 2 columns SOT323 (S-mini) package. The Gold metallization ensures BFT93W uses the same crystal as the excellent reliability SOT23 version, BFT93. SOT323 (S-mini) package. 12 PINNING APPLICATIONS MBC870 Top view PIN DESCRIPTION It is intended as a general purpose 1base transistor for wideband applications BFT93W Marking code: X1. up to 2 GHz. 2emitter Fig.1 SOT323. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 15 V CBO V collector-emitter voltage open base 12 V CEO I collector current (DC) 50 mA C P total power dissipation up to T =93 C note 1 300 mW tot s h DC current gain I = 30 mA V = 5 V 20 50 FE C CE C feedback capacitance I =0 V = 5V f=1 MHz 1 pF re C CE f transition frequency I = 30 mA V = 5V 4 GHz T C CE f = 500 MHz G maximum unilateral power gain I = 30 mA V = 5V 15.5 dB UM C CE f = 500 MHz T =25 C amb F noise figure I = 10 mA V = 5V 2.4 dB C CE f = 500 MHz T junction temperature 150 C j Note 1. T is the temperature at the soldering point of the collector pin. s March 1994 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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