BFU580G 7 2 6 NPN wideband silicon RF transistor Rev. 1 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits Low noise, high linearity, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NF ) = 0.75 dB at 900 MHz min Maximum stable gain 15.5 dB at 900 MHz 11 GHz f silicon technology T 1.3 Applications Applications requiring high supply voltages and high breakdown voltages Broadband amplifiers up to 2 GHz Low noise, high linearity amplifiers for ISM applications Automotive applications (e.g., antenna amplifiers) 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit collector-base voltage open emitter - - 24 V V CB collector-emitter voltage open base - - 12 V V CE shorted base - - 24 V emitter-base voltage open collector - - 2 V V EB collector current - 30 60 mA I C 1 total power dissipation T 120 C - - 1000 mW P tot sp DC current gain I =30 mA V =8V 60 95 130 h FE C CE collector capacitance V =8V f = 1MHz - 1.1 - pF C c CB transition frequency I =30 mA V = 8 V f = 900 MHz - 11 - GHz f T C CEBFU580G NXP Semiconductors NPN wideband silicon RF transistor Table 1. Quick reference data continued T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit 2 G maximum power gain I =30 mA V = 8 V f = 900 MHz - 15.5 - dB p(max) C CE NF minimum noise figure I =5 mA V = 8 V f = 900 MHz = -0.75- dB min C CE S opt P output power at 1 dB gain I =30 mA V =8V Z =Z =50 -13 - dBm L(1dB) C CE S L compression f=900MHz 1 T is the temperature at the solder point of the collector lead. sp 2 If K > 1 then G is the maximum power gain. If K 1 then G =MSG. p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 2base 3emitter 4 collector E PE 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU580G - plastic surface-mounted package with increased heatsink 4 leads SOT223 1 OM7966 - Customer evaluation kit for BFU580G and BFU590G - 1 The customer evaluation kit contains the following: a) Unpopulated RF amplifier Printed-Circuit Board (PCB) b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB) d) BFU580G and BFU590G samples e) USB stick with data sheets, application notes, models, S-parameter and noise files 4. Marking Table 4. Marking Type number Marking BFU580G BFU580 BFU580G All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 1 28 April 2014 2 of 21