X-On Electronics has gained recognition as a prominent supplier of BFU660F,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFU660F,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFU660F,115 NXP

BFU660F,115 electronic component of NXP
BFU660F,115 NXP
BFU660F,115 RF Bipolar Transistors
BFU660F,115  Semiconductors

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See Product Specifications
Part No. BFU660F,115
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar Single NPN 21GHz
Datasheet: BFU660F,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8237 ea
Line Total: USD 0.82 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
25
Ship by Fri. 16 May to Wed. 21 May
MOQ : 1
Multiples : 1
1 : USD 0.6166
10 : USD 0.603
30 : USD 0.595
100 : USD 0.3942

   
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Transistor Polarity
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
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We are delighted to provide the BFU660F,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFU660F,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFU660F NPN wideband silicon RF transistor Rev. 1 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Low noise high linearity RF transistor High output third-order intercept point 27 dBm at 1.8 GHz 40 GHz f silicon technology T 1.3 Applications Analog/digital cordless applications X-band high output buffer amplifier ZigBee SDARS second stage LNA LTE, cellular, UMTSBFU660F NXP Semiconductors NPN wideband silicon RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 16 V CBO V collector-emitter voltage open base - - 5.5 V CEO V emitter-base voltage open collector - - 2.5 V EBO I collector current - 30 60 mA C 1 P total power dissipation T 90 C -- 225mW tot sp h DC current gain I =10mA V =2V 90 135 180 FE C CE T =25 C j C collector-base capacitance V = 2 V f = 1 MHz - 138 - fF CBS CB f transition frequency I =20mA V =1V -21 - GHz T C CE f=2GHz T =25 C amb IP3 output third-order intercept I =40mA V =4V -28 - dBm O C CE point f=5.8GHz T =25 C amb 2 G maximum power gain I =30mA V =1V -24 - dB p(max) C CE f=1.8GHz T =25 C amb NF noise figure I =6mA V =2V -0.65 - dB C CE f=1.8GHz = S opt T =25 C amb P output power at 1 dB gain I =60mA V =4V -17 - dBm L(1dB) C CE compression Z =Z =50 S L f=1.8GHz T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G =MSG. p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 34 4 2base 3emitter 2 4 collector 1, 3 2 1 mbb159 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU660F - plastic surface-mounted flat pack package reverse SOT343F pinning 4 leads BFU660F All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 11 January 2011 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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