Product Information

BGA2031/1,115

BGA2031/1,115 electronic component of NXP

Datasheet
RF Amplifier MMVAR GAIN AMP
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.4491 ea
Line Total: USD 1347.3

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.4491

0 - WHS 2


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 1.4583
10 : USD 1.2944
25 : USD 1.1696

0 - WHS 3


Ships to you between Tue. 14 May to Mon. 20 May


Multiples : 1

0 - WHS 4


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 3000
Multiples : 1
3000 : USD 0.5616

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Test Frequency
Brand
Factory Pack Quantity :
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BGA2031/1 MMIC variable gain amplifier Product specification 2001 Feb 05 Supersedes data of 2000 Mar 02NXP Semiconductors Product specification MMIC variable gain amplifier BGA2031/1 FEATURES PINNING High gain PIN DESCRIPTION Excellent adjacent channel power rejection 1RFin Small SMD package 2CTRL Low dissipation. 3V S1 4V +RFout S2 APPLICATIONS 5GND 6GND General purpose variable gain amplifier for low voltage and medium power Driver for power amplifiers in systems that require good handbook, halfpage V linearity, such as CDMA, both cellular band (850 MHz) S1 65 4 and PCS (1.9 GHz). This is because of the high output RFin power and good linearity. V +RFout S2 GND DESCRIPTION CTRL BIAS Silicon Monolitic Microwave Integrated Circuit (MMIC) CIRCUIT 12 3 2 stage variable gain amplifier in double polysilicon Top view MAM440 technology in a 6-pin SOT363 SMD plastic package for low voltage medium power applications. Marking code: A3 Fig.1 Simplified outline (SOT363) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V supply voltage 3 3.3 V S1 V supply voltage 3 3.3 V S2 I supply current pins 3 and 4 V =0 0 10 A S CTRL V =2.7 V V =3V 51 63 mA CTRL S V =2.4 V V =3V 30 37 mA CTRL S P load power at 1 dB gain compression point 13 dBm L f=1.9GHz ACPR adjacent channel power rejection f = 1.9 GHz P =10dBm 49 dBc L f= 836MHz P =8dBm 48 dBc L G power gain f = 1.9 GHz P =12dBm 23 dB p L f= 836MHz P =8dBm 24 dB L G gain control range f = 836 MHz P =8dBm 62 dB L CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2001 Feb 05 2

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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