BGA2709,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BGA2709 MMIC wideband amplifier Product specification 2002 Aug 06 Supersedes data of 2002 Feb 05NXP Semiconductors Product specification MMIC wideband amplifier BGA2709 FEATURES PINNING Internally matched to 50 PIN DESCRIPTION Very wide frequency range (3.6 GHz at 3 dB bandwidth) 1V S 2, 5 GND2 Flat 23 dB gain (DC to 2.6 GHz at 1 dB flatness) 3RF out 12.5 dBm saturated output power at 1 GHz 4GND1 High linearity (22 dBm OIP3 at 1 GHz) 6RF in Unconditionally stable (K > 1.2). APPLICATIONS 6 5 4 1 Cable systems LNB IF amplifiers 63 General purpose ISM. 4 2, 5 132 Top view MAM455 DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) Marking code: E3-. wideband amplifier with internal matching circuit in a 6-pin Fig.1 Simplified outline (SOT363) and symbol. SOT363 SMD plastic package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V DC supply voltage 5 6 V S I DC supply current 23.5 mA S 2 s insertion power gain f = 1 GHz 22.7 dB 21 NF noise figure f = 1 GHz 4 dB P saturated load power f = 1 GHz 12.5 dBm L(sat) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DC supply voltage RF input AC coupled 6V S I supply current 35 mA S P total power dissipation T 90 C 200 mW tot s T storage temperature 65 +150 C stg T operating junction temperature 150 C j P maximum drive power 10 dBm D CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2002 Aug 06 2