BGA3015,115 NXP

BGA3018 1 GHz 18 dB gain wideband amplifier MMIC Rev. 3 26 September 2013 Product data sheet 1. Product profile 1.1 General description The BGA3018 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency range of 5 MHz to 1006 MHz. The LNA is housed in a lead free 3-pin SOT89 package. 1.2 Features and benefits Internally biased Noise figure of 2.1 dB Flat gain 75 input and output impedance High linearity with an IP3 of 40 dBm and Operating from 5 V to 8 V supply O an IP2 of 60 dBm O 1.3 Applications General wideband amplifiers. CATV return amplifier frequency ranges of 5 MHz to 300 MHz. CATV infrastructure network driver in optical nodes (FTTx), distribution amplifiers, trunk amplifiers and line extenders in the frequency range from 40 MHz to 1006 MHz. The product is ideally suited for applications as drop amplifiers in CATV distribution systems such as FTTH 1.4 Quick reference data Table 1. Quick reference data Bandwidth 40 MHz to 1006 MHz T =25 C typical values at V = 8 V Z =Z =75 R1 = 470 R2 = 300 . amb CC S L Symbol Parameter Conditions Min Typ Max Unit V supply voltage RF input AC coupled 7.6 8 8.4 V CC I total supply current - 120 135 mA CC(tot) T ambient temperature 40 - +85 C amb NF noise figure f = 500 MHz - 2.1 2.6 dB P output power at 1 dB gain compression 23.5 25 - dBm L(1dB) 1 IP3 output third-order intercept point 36 40 - dBm O 2 IP2 output second-order intercept point -60 - dBm O 1 The fundamental frequencies (f ) and (f ) lay between 40 MHz and 1006 MHz. The intermodulation product (IM3) is 2 f f , where 1 2 2 1 f =f 6 MHz. Input power P = 20 dBm. 2 1 i 2 The fundamental frequencies (f ) and (f ) lay between 40 MHz and 1006 MHz. The intermodulation product (IM2) is f f , with 1 2 2 1 40 MHz < f -f < 1006 MHz. Input power P = 20 dBm. 1 2 i SOT89BGA3018 NXP Semiconductors 1 GHz 18 dB gain wideband amplifier MMIC 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 1 RF OUT and biasing 2 2GND 3 1 1 3RF IN 2 sym130 321 1 This pin is DC-coupled and requires an external DC-blocking capacitor. 2 The center metal base of the SOT89 also functions as heatsink for the power amplifier. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BGA3018 - plastic surface-mounted package exposed die pad SOT89 for good heat transfer 3 leads OM7860 EVB 1 GHz 18 dB gain wideband amplifier application - OM7864 EVB 5 MHz to 300 MHz 18 dB reverse amplifier application - OM7868 EVB 40 MHz to 1006 MHz push-pull amplifier application - OM7861 EVB BGA301x wideband variable gain amplifier application - 4. Marking Table 4. Marking codes Type number Marking code Description BGA3018 *6Y * = W : made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V supply voltage RF input AC coupled 0.6 +15 V CC P input power single tone - 20 dBm i T storage temperature 65 +150 C stg T junction temperature - 150 C j T ambient temperature 40 +85 C amb V electrostatic discharge Human Body Model (HBM) 2- kV ESD voltage According JEDEC standard 22-A114E Charged Device Model (CDM) 2- kV According JEDEC standard 22-C101B BGA3018 All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved. Product data sheet Rev. 3 26 September 2013 2 of 15