BGY68,112 is a high-performance, low-voltage, bilateral positive-intrinsic-negative (PNP) transistor with NPN complementary field-effect-transistor (FET) technology. It is designed to provide high levels of noise immunity, fast switching speed and low on-state resistance. BGY68,112 is intended for a wide range of applications including low noise pre-amplifier stages, high-speed motor control, power switching, interface circuits and signal switching.