BGY67A,112 NXP

BGY67A 200 MHz, 24 dB gain reverse amplifier Rev. 5 19 September 2011 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC). CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction TiPtAu metallized crystals ensure optimal reliability 1.3 Applications Reverse amplifier in two-way CATV systems in the 5 MHz to 200 MHz frequency range 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit G power gain f = 10 MHz 23.5 - 24.5 dB p 1 I total current consumption (DC) - 215 230 mA tot 1 The module normally operates at V = 24 V, but is able to withstand supply transients up to 30 V. B 1 23 5 78 9BGY67A NXP Semiconductors 200 MHz, 24 dB gain reverse amplifier 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 input 5 2 common 13 57 9 1 9 3 common 5+V B 23 78 7 common sym095 8 common 9 output 3. Ordering information Table 3. Ordering information Type Package number Name Description Version BGY67A - rectangular single-ended package aluminium flange 2 vertical SOT115J mounting holes 2 6-32 UNC and 2 extra horizontal mounting holes 7 gold-plated in-line leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V RF input voltage - 65 dBmV i T storage temperature 40 +100 C stg T mounting base temperature 20 +90 C mb BGY67A All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 19 September 2011 2 of 8