BLF175 HF/VHF power MOS transistor Rev. 4 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product specication HF/VHF power MOS transistor BLF175 FEATURES PIN CONFIGURATION High power gain Low intermodulation distortion Easy power control Good thermal stability ook, halfpage Withstands full load mismatch 1 4 Gold metallization ensures excellent reliability. d g DESCRIPTION s MBB072 Silicon N-channel enhancement 23 mode vertical D-MOS transistor designed for large signal amplifier MSB057 applications in the HF/VHF frequency range. The transistor has a 4-lead, SOT123A Fig.1 Simplified outline and symbol. flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source CAUTION voltage (V ) information is provided GS for matched pair applications. Refer This product is supplied in anti-static packing to prevent damage caused by to the handbook General section for electrostatic discharge during transport and handling. For further information, further information. refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. PINNING - SOT123A WARNING PIN DESCRIPTION Product and environmental safety - toxic materials 1 drain This product contains beryllium oxide. The product is entirely safe provided 2 source that the BeO disc is not damaged. All persons who handle, use or dispose of 3 gate this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to 4 source the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at T = 25 C in a common source test circuit. h MODE OF f V I P G d DS DQ L p D 3 OPERATION (MH ) (V) (mA) (W) (dB) (%) (dB) Z class-A 28 50 800 8 (PEP) >24 -<- 40 (1) class-AB 28 50 150 30 (PEP) typ. 24 typ. 40 typ. - 35 CW, class-B 108 50 30 30 typ. 20 typ. 65 - Note 1. 2-tone efficiency. 2003 Jul 22 2