Product Information

BLF6G13LS-250P,112

BLF6G13LS-250P,112 electronic component of NXP

Datasheet
Trans RF MOSFET N-CH 100V 42A 5-Pin CDFM Bulk
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 255.8043 ea
Line Total: USD 255.8

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
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Id - Continuous Drain Current
Gain
Output Power
Mounting Style
Packaging
Channel Mode
Channel Type
Mode Of Operation
Drain Source Resistance Max
Package Type
Pin Count
Drain Source Voltage Max
Forward Transconductance Typ
Number Of Elements
Screening Level
Vswr Max
Rad Hardened
Operating Temp Range
Drain Efficiency Typ
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Additional Infomation About Product

BLF6G13L-250P BLF6G13LS-250P Power LDMOS transistor Rev. 3 14 October 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at T =25 C I = 100 mA in a class-AB production test circuit. case Dq Mode of operation f V P G DS L(1dB) p D (GHz) (V) (W) (dB) (%) CW 1.3 50 250 17 56 1.2 Features and benefits Typical CW performance at a frequency of 1.3 GHz, a supply voltage of 50 V, an I of Dq 100 mA: Output power = 250 W Power gain = 17 dB Efficiency = 56 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applicationsBLF6G13L-250P BLF6G13LS-250P NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G13L-250P (SOT1121A) 1drain1 1 2 1 2drain2 3gate1 3 4gate2 5 5 4 1 5source 3 4 2 sym117 BLF6G13LS-250P (SOT1121B) 1drain1 1 2 1 2drain2 3gate1 5 3 4gate2 5 4 1 5source 3 4 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G13L-250P - flanged LDMOST ceramic package 2 mounting SOT1121A holes 4 leads BLF6G13LS-250P - earless flanged LDMOST ceramic package 4 leads SOT1121B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 100 V DS V gate-source voltage 0.5 +13 V GS I drain current - 42 A D T storage temperature 65 +150 C stg T junction temperature - 200 C j BLF6G13L-250P 6G13LS-250P All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 14 October 2011 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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