Product Information

BLF7G21LS-160P,112

BLF7G21LS-160P,112 electronic component of NXP

Datasheet
RF MOSFET Transistors Power LDMOS transistor
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 100.386 ea
Line Total: USD 2007.72

0 - Global Stock
MOQ: 20  Multiples: 20
Pack Size: 20

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Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 20
Multiples : 20
20 : USD 100.386

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Id - Continuous Drain Current
Operating Frequency
Gain
Output Power
Maximum Operating Temperature
Mounting Style
Packaging
Package Case
Type
Brand
Rds On Drain Source Resistance
Factory Pack Quantity :
Vds Drain Source Breakdown Voltage
Vgs Gate Source Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
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Additional Infomation About Product

BLF7G21L-160P; BLF7G21LS-160P Power LDMOS transistor Rev. 4 1 September 2015 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz, also suitable for operation at 1495 MHz to 1511 MHz. Table 1. Typical performance Typical RF performance at T = 25 C in a common source class-AB production test circuit. case Mode of operation f I V P G ACPR Dq DS L(AV) p D (MHz) (mA) (V) (W) (dB) (%) (dBc) [1] 2-carrier W-CDMA 1930 to 1990 1080 28 45 18 34 30 [2] 1-carrier W-CDMA 1930 to 1990 1080 28 50 18.0 36 34 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. [2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.2 Features and benefits Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation (1800 MHz to 2050 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to 2050 MHz frequency rangeBLF7G21L-160P; BLF7G21LS-160P Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G21L-160P (SOT1121A) 1drain1 1 2 1 2drain2 3gate1 3 4gate2 5 5 4 [1] 5source 3 4 2 sym117 BLF7G21LS-160P (SOT1121B) 1drain1 12 1 2drain2 5 3gate1 3 4gate2 5 4 [1] 5source 2 34 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF7G21L-160P - flanged LDMOST ceramic package; 2 mounting holes; SOT1121A 4 leads BLF7G21LS-160P - earless flanged ceramic package; 4 leads SOT1121B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS I drain current - 32.5 A D T storage temperature 65 +150 C stg T junction temperature - 200 C j BLF7G21L-160P_7G21LS-160P#4 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 1 September 2015 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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