Product Information

BLF7G20L-90P

BLF7G20L-90P electronic component of NXP

Datasheet
Trans RF MOSFET N-CH 65V 18A 5-Pin CDFM
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 35.4975 ea
Line Total: USD 3549.75

0 - Global Stock
MOQ: 100  Multiples: 100
Pack Size: 100

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Operating Frequency
Gain
Output Power
Mounting Style
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Mode Of Operation
Channel Type
Screening Level
Channel Mode
Rad Hardened
Vswr Max
Frequency Min
Forward Transconductance Typ
Drain Efficiency Typ
Drain Source Resistance Max
Drain Source Voltage Max
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Additional Infomation About Product

BLF7G20L-90P BLF7G20LS-90P Power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at T = 25 C in a common source class-AB production test circuit. case Mode of operation f I V P G ACPR ACPR EVM Dq DS L(AV) p D 400k 600k rms (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) (%) CW 1805 to 1880 550 28 84 19 54 - - - GSM EDGE 1805 to 1880 550 28 40 19.5 41 61 74 2.5 1.2 Features and benefits Excellent ruggedness High efficiency Low R providing excellent thermal stability th Designed for broadband operation (1427 MHz to1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to 2170 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for base stations and multi carrier applications in the frequency bands of 1427 MHz to 1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to 2170 MHz.BLF7G20L-90P BLF7G20LS-90P Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G20L-90P (SOT1121A) 1drain1 1 2 1 2drain2 3gate1 3 4gate2 5 5 4 1 5source 3 4 2 sym117 BLF7G20LS-90P (SOT1121B) 1drain1 1 2drain2 3gate1 3 4gate2 5 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF7G20L-90P - flanged LDMOST ceramic package 2 mounting holes SOT1121A 4 leads BLF7G20LS-90P - earless flanged LDMOST ceramic package 4 leads SOT1121B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS I drain current - 18 A D T storage temperature 65 +150 C stg T junction temperature - 200 C j BLF7G20L-90P 7G20LS-90P 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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