BSR12,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR12 PNP switching transistor Product specication 1999 Jul 23Philips Semiconductors Product specication PNP switching transistor BSR12 FEATURES Low current (max. 100 mA) handbook, halfpage 3 Low voltage (max. 15 V). 3 1 APPLICATIONS High-speed, saturated switching applications for 2 industrial service in thick and thin-film circuits. 1 2 Top view MAM256 DESCRIPTION PNP switching transistor in a SOT23 plastic package. Fig.1 Simplified outline (SOT23) and symbol. PINNING PIN DESCRIPTION MARKING 1 base TYPE NUMBER MARKING CODE 2 emitter 3 collector BSR12 B5p QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter -- 15 V CBO V collector-emitter voltage open base -- 15 V CEO I peak collector current -- 200 mA CM P total power dissipation T 25 C - 250 mW tot amb T junction temperature - 150 C j h DC current gain I = - 10 mA V = - 1V 30 - FE C CE I = - 50 mA V = - 1 V 30 120 C CE f transition frequency f = 500 MHz I = - 50 mA V = - 10 V 1.5 - GHz T C CE t turn-off time I = - 30 mA I = - 3 mA I = 3mA - 30 ns off Con Bon Boff 1999 Jul 23 2