BSR14.215 is a N-channel Logic Level Enhancement Mode Field-Effect Transistor (MOSFET) manufactured by Nexperia. This MOSFET is optimized for high-side switching applications, with an on-state resistance (RDS(on)) of 7.5m?, an operating voltage of 20V, and a maximum drain current of 2A. Additionally, it features a low gate threshold voltage (VGS(th)) of 2.8V and an avalanche energy rating of 6.5mJ. The BSR14.215 is constructed of a healthy silicon substrate and a robust field-oxide passivation system, ensuring reliable operations. The MOSFET is ideal for applications requiring high power efficiency, fast switching, and minimal power dissipation.