Product Information

BT151-500RT,127

BT151-500RT,127 electronic component of NXP

Datasheet
SCRs THYRISTOR 12A 500V

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9309 ea
Line Total: USD 0.93

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1
1 : USD 0.6612
10 : USD 0.5785
100 : USD 0.437
500 : USD 0.3611
1000 : USD 0.3036
2000 : USD 0.2795
5000 : USD 0.2633
10000 : USD 0.2633
25000 : USD 0.2633

     
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Forward Voltage Drop
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off State Leakage Current Vdrm Idrm
Package Case
Rated Repetitive Off State Voltage Vdrm
Brand
Gate Trigger Current Igt
Gate Trigger Voltage Vgt
Non Repetitive On State Current
On State Rms Current It Rms
Factory Pack Quantity :
Rohs Mouser
Current Rating
Height
Length
Off-State Leakage Current Vdrm Idrm
Type
Width
Cnhts
Hts Code
Non Repetitive On-State Current
Product Type
Subcategory
Taric
LoadingGif

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BT151-500RT SCR 22 February 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic package intended for use in applications requiring good bidirectional blocking voltage capability, high surge current capability, high junction temperature capability and high thermal cycling performance. 2. Features and benefits Good bidirectional blocking voltage capability High junction operating temperature capability High surge current capability High thermal cycling performance Planar passivated for voltage ruggedness and reliability 3. Applications Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 500 V DRM state voltage V repetitive peak reverse - - 500 V RRM voltage I non-repetitive peak on- half sine wave T = 25 C - - 132 A TSM j(init) state current t = 8.3 ms p half sine wave T = 25 C - - 120 A j(init) t = 10 ms Fig. 4 Fig. 5 p T junction temperature - - 150 C j I average on-state half sine wave T 133 C - - 8 A T(AV) mb current I RMS on-state current half sine wave T 133 C Fig. 1 - - 12.5 A T(RMS) mb Fig. 2 Fig. 3 Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 7 - 2 15 mA GT D T jWeEn Semiconductors BT151-500RT SCR Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics dV /dt rate of rise of off-state V = 335 V T = 150 C (V = 67% - 300 - V/s D DM j DM voltage of V ) gate open circuit exponential DRM waveform Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb A K G 2 A anode sym037 3 G gate mb A mounting base connected to anode 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT151-500RT TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BT151-500RT All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 22 February 2018 2 / 12

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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