Product Information

BT152-500RT,127

BT152-500RT,127 electronic component of NXP

Datasheet
SCRs THYRISTOR 20A 500V
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0151 ea
Line Total: USD 2.02

329 - Global Stock
Ships to you between
Mon. 13 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5468 - WHS 1


Ships to you between Mon. 13 May to Wed. 15 May

MOQ : 1
Multiples : 1
1 : USD 1.219
10 : USD 0.981
100 : USD 0.7889
500 : USD 0.6877
1000 : USD 0.5761
2000 : USD 0.5509
5000 : USD 0.5083
10000 : USD 0.5083

Read More Specifications

     
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Forward Voltage Drop
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Maximum Operating Temperature
Off State Leakage Current Vdrm Idrm
Package Case
Rated Repetitive Off State Voltage Vdrm
Brand
Gate Trigger Current Igt
Gate Trigger Voltage Vgt
On State Rms Current It Rms
Factory Pack Quantity :
Rohs Mouser
Current Rating
Height
Length
Off-State Leakage Current Vdrm Idrm
Type
Width
Cnhts
Hts Code
Non Repetitive On-State Current
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BT152-500RT SCR Rev. 2 9 June 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package intended for use in applications requiring very high inrush current capability, high junction temperature capability and high thermal cycling performance. 1.2 Features and benefits High junction temperature capability Planar passivated for voltage ruggedness and reliability High thermal cycling performance Very high current surge capability 1.3 Applications Ignition circuits Protection circuits e.g. SMPS inrush current Motor control Voltage regulation 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit repetitive peak off-state --500V V DRM voltage V repetitive peak reverse --500V RRM voltage I non-repetitive peak half sine wave; T =25C; --220A TSM j(init) on-state current t =8.3 ms p =25C; --200A half sine wave; T j(init) t = 10 ms; see Figure 4; p see Figure 5 I average on-state half sine wave; T 122 C; --13 A T(AV) mb current see Figure 3 RMS on-state current half sine wave; see Figure 1; --20 A I T(RMS) see Figure 2 Static characteristics I gate trigger current V =12V; I =100 mA; -3 32 mA GT D T T =25 C; see Figure 7 j TO-220ABBT152-500RT NXP Semiconductors SCR 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb AK 2 A anode G 3 G gate sym037 mb A mounting base; connected to anode 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BT152-500RT TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78 hole; 3-lead TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state voltage - 500 V DRM V repetitive peak reverse voltage - 500 V RRM I average on-state current half sine wave; T 122 C; see Figure 3 -13 A T(AV) mb I RMS on-state current half sine wave; see Figure 1; see Figure 2 -20 A T(RMS) I non-repetitive peak on-state half sine wave; T =25C; t = 8.3 ms - 220 A TSM j(init) p current half sine wave; T =25C; t = 10 ms; - 200 A j(init) p see Figure 4; see Figure 5 2 2 2 ItI t for fusing t = 10 ms; sine-wave pulse - 200 A s p dI /dt rate of rise of on-state current I =50A; I = 200 mA; dI /dt = 200 mA/s - 200 A/s T T G G I peak gate current - 5 A GM V peak reverse gate voltage - 5 V RGM P peak gate power - 20 W GM P average gate power over any 20 ms period - 1 W G(AV) T storage temperature -40 150 C stg T junction temperature - 150 C j BT152-500RT All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 9 June 2011 2 of 12

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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