BTA208S-600B,118 NXP

BTA208S-600B 3Q Hi-Com Triac 2 July 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High voltage capability Less sensitive gate for very high noise immunity Planar passivated for voltage ruggedness and reliability Surface mountable package Triggering in three quadrants only 3. Applications Electronic thermostats General purpose motor controls Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 102 C Fig. 1 - - 8 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 65 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 72 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 2 18 50 mA GT D T T = 25 C Fig. 7 jWeEn Semiconductors BTA208S-600B 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- 2 21 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- 2 34 50 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - 31 60 mA H D j V on-state voltage I = 10 A T = 25 C Fig. 10 - 1.3 1.65 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (V = 67% 1000 4000 - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 8 A - 14 - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s snubberless com condition gate open circuit Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main terminal 2 DPAK (SOT428) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA208S-600B DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BTA208S-600B All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 2 July 2018 2 / 13