BTA208X-800B,127 NXP

BTA208X-800B 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186Afull pac plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High voltage capability Isolated mounting base package Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only 3. Applications Electronic thermostats General purpose motor controls Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave T 73 C Fig. 1 - - 8 A T(RMS) h Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 65 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 71 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 2 18 50 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- 2 21 50 mA D T T = 25 C Fig. 7 jWeEn Semiconductors BTA208X-800B 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2- G- 2 34 50 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - 31 60 mA H D j V on-state voltage I = 10 A T = 25 C Fig. 10 - 1.3 1.65 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 1000 4000 - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 8 A - 14 - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s gate open circuit com snubberless condition Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA208X-800B TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac BTA208X-800B All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 2 / 13