BUJD103AD NXP

BUJD103AD NPN power transistor with integrated diode Rev. 3 3 August 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package. 1.2 Features and benefits Fast switching Integrated anti-parallel E-C diode High voltage capability Very low switching and conduction losses 1.3 Applications DC-to-DC converters Inverters Electronic lighting ballasts Motor control systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I collector current see Figure 1 see Figure 2 DC --4 A C see Figure 4 P total power see Figure 3 T 25C --80 W tot mb dissipation V collector-emitter V=0V --700V CESM BE peak voltage Static characteristics h DC current gain I =500 mA V =5V 13 21 32 FE C CE see Figure 10 T =25C j V =5 V I =3A -12.5- CE C T = 25 C see Figure 10 mbBUJD103AD NXP Semiconductors NPN power transistor with integrated diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base mb C 1 2 C collector 3E emitter B E 2 sym131 1 3 SOT428 (DPAK) 1 it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUJD103AD DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-emitter peak voltage V = 0 V - 700 V CESM BE V collector-base voltage I = 0 A - 700 V CBO E V collector-emitter voltage I = 0 A - 400 V CEO B I collector current DC see Figure 1 see Figure 2 -4 A C see Figure 4 I peak collector current see Figure 1 see Figure 2 see Figure 4 -8 A CM I base current DC - 2 A B I peak base current - 4 A BM P total power dissipation T 25 C see Figure 3 -80 W tot mb T storage temperature -65 150 C stg T junction temperature - 150 C j BUJD103AD All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 3 August 2010 2 of 13