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BUK6209-30C,118

BUK6209-30C,118 electronic component of NXP
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Part No. BUK6209-30C,118
Manufacturer: NXP
Category: MOSFET
Description: Trans MOSFET N-CH 30V 50A Automotive 3-Pin(2+Tab) DPAK T/R
Datasheet: BUK6209-30C,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

31: USD 1.1289 ea
Line Total: USD 35

0 - Global Stock
MOQ: 31  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun


Multiples : 1

0 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun


Multiples : 1

0 - WHS 3


Ships to you between Thu. 30 May to Wed. 05 Jun


Multiples : 1

     
Manufacturer
Product Category
Packaging
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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BUK6209-30C N-channel TrenchMOS intermediate level FET Rev. 2 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard and logic level gate drive sources 1.3 Applications 12 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoid control switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --30 V DS j j voltage 1 I drain current V =10V T =25C --50 A D GS mb see Figure 1 total power T = 25 C see Figure 2 --80 W P tot mb dissipation Static characteristics R drain-source V =10V I =12A -8.3 9.8 m DSon GS D on-state T =25C see Figure 11 j resistanceBUK6209-30C Nexperia N-channel TrenchMOS intermediate level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =50A V 30 V --74 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =24V -7.9 -nC GD D DS V = 10 V see Figure 13 GS see Figure 14 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6209-30C DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK6209-30C All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 1 October 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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