BUK6207-55C,118 NXP

BUK6207-55C,118 electronic component of NXP
BUK6207-55C,118 NXP
BUK6207-55C,118 MOSFETs
BUK6207-55C,118  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of BUK6207-55C,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK6207-55C,118 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.BUK6207-55C,118
Manufacturer:NXP
Category:MOSFETs
Description:MOSFET N-CHAN 55V 81A
Datasheet:BUK6207-55C,118 Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
  
2500: USD 0.602 ea
Line Total: USD 1505 
Availability : 0
  
QtyUnit Price
2500$ 0.602
  

Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.602

   
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Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
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We are delighted to provide the BUK6207-55C,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK6207-55C,118 and other electronic components in the MOSFETs category and beyond.

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BUK6207-55C N-channel TrenchMOS intermediate level FET Rev. 2 17 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Compatible with logic and standard level gate drives 1.3 Applications 12 V and 24 V automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoid control switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --55 V DS j j voltage 1 I drain current V =10V T =25C --90 A D GS mb see Figure 1 total power T = 25 C see Figure 2 --158W P tot mb dissipation Static characteristics R drain-source V =10V I =25A -6.6 7.8 m DSon GS D on-state T =25C see Figure 11 j resistanceBUK6207-55C NXP Semiconductors N-channel TrenchMOS intermediate level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =90A V 55 V --143mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =44V -19 -nC GD D DS V = 10 V see Figure 13 GS see Figure 14 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6207-55C DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK6207-55C All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 17 September 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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