BUK6E2R0-30C,127 NXP

BUK6E2R0-30C N-channel TrenchMOS intermediate level FET Rev. 02 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for intermediate level gate drive sources 1.3 Applications 12 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoid control switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --30 V DS j j voltage 1 I drain current V =10V T =25C --120A D GS mb see Figure 1 total power T = 25 C see Figure 2 --306W P tot mb dissipation Static characteristics R drain-source V =10V I =25A -1.9 2.2 m DSon GS D on-state T =25C see Figure 16 j resistance Avalanche ruggedness E non-repetitive I =120 A V 30 V --1.7 J DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) 1 Continuous current is limited by package.BUK6E2R0-30C Nexperia N-channel TrenchMOS intermediate level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2D Drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6E2R0-30C I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 BUK6E2R0-30C All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 7 September 2010 2 of 15