BUK6E3R4-40C,127

BUK6E3R4-40C N-channel TrenchMOS intermediate level FET Rev. 3 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for intermediate level gate drive sources 1.3 Applications 12 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoid control switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --40 V DS j j voltage 1 I drain current V =10V T =25C --100A D GS mb see Figure 1 P total power T = 25 C see Figure 2 --204W tot mb dissipation Static characteristics R drain-source V =10V I =25A - 3.05 3.6 m DSon GS D on-state T =25C see Figure 11 j resistanceBUK6E3R4-40C NXP Semiconductors N-channel TrenchMOS intermediate level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =100 A V 40 V --368mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =32V -42 - nC GD D DS V = 10 V see Figure 13 GS see Figure 14 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D mb 2D Drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6E3R4-40C I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 BUK6E3R4-40C All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 14 October 2010 2 of 14