X-On Electronics has gained recognition as a prominent supplier of BUK7207-30B,118 mosfet across the USA, India, Europe, Australia, and various other global locations. BUK7207-30B,118 mosfet are a product manufactured by NXP. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BUK7207-30B,118 NXP

BUK7207-30B,118 electronic component of NXP
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Part No.BUK7207-30B,118
Manufacturer: NXP
Category:MOSFET
Description: Trans MOSFET N-CH 30V 112A Automotive 3-Pin(2+Tab) DPAK T/R
Datasheet: BUK7207-30B,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

14: USD 2.5855 ea
Line Total: USD 36.2

Availability - 0
MOQ: 14  Multiples: 1
Pack Size: 1
     
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Gate Source Voltage Max
Power Dissipation
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Drain Source On Res
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Number Of Elements
Operating Temperature Classification
Drain Source On Volt
Rad Hardened
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BUK7207-30B N-channel TrenchMOS standard level FET Rev. 3 23 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 185 C rating 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source T 25 C T 185C --30 V V DS j j voltage 1 I drain current V =10V T =25C --75 A D GS j see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --167W tot mb dissipation Static characteristics drain-source V =10V I =25A -5.9 7 m R DSon GS D on-state T =25C see Figure 11 j resistance see Figure 12BUK7207-30B Nexperia N-channel TrenchMOS standard level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =75A V 30 V --329mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =10V I =25A -10 -nC GD GS D V =24 V T =25C DS j see Figure 13 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7207-30B DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK7207-30B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 23 February 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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