BUK7509-75A,127 NXP

BUK7509-75A N-channel TrenchMOS standard level FET Rev. 03 21 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 75 V DS j j I drain current V =10V T =25C --75 A D GS mb see Figure 1 see Figure 3 P total power dissipation T = 25 C see Figure 2 --230W tot mb Static characteristics R drain-source on-state V =10V I =25A --18.9m DSon GS D resistance T =175 C see Figure 12 j see Figure 13 V =10V I =25A -7.7 9 m GS D T = 25 C see Figure 12 j see Figure 13 Avalanche ruggedness E non-repetitive I =75 A V 75 V --560mJ DS(AL)S D sup drain-source avalanche R =50 V =10V GS GS energy T = 25 C unclamped j(init) TO-220ABBUK7509-75A NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78A (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7509-75A TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78A hole 3-lead TO-220AB BUK7509-75A All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 03 21 February 2011 2 of 14