BUK7C06-40AITE,118 NXP

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of BUK7C06-40AITE N-channel TrenchPLUS standard level FET Rev. 05 16 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Allows responsive temperature Low conduction losses due to low monitoring due to integrated on-state resistance temperature sensor Q101 compliant Electrostatically robust due to Reduced component count due to integrated protection diodes integrated current sensor 1.3 Applications Automotive and general purpose Fan control power switching Variable valve timing for engines Electrical Power Assisted Steering (EPAS) 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V =10V T =25C see Figure 2 1 - - 155 A D GS mb see Figure 3 Static characteristics R drain-source on-state V =10V I =50A T =25C see -4.7 6 m DSon GS D j resistance Figure 7 see Figure 8 I /I ratio of drain current to T >-55 C T < 175 C V = 10 V 585 615 645 D sense j j GS sense current S temperature sense diode I = 250 A T >-55 C T < 175 C -1.4 -1.54 -1.68 mV/K F(TSD) F j j temperature coefficient V temperature sense diode I = 250 A T = 25 C 648 658 668 mV F(TSD) F j forward voltage 1 Current is limited by power dissipation chip rating.