BUK7E07-55B,127

BUK7E07-55B N-channel TrenchMOS standard level FET Rev. 01 29 January 2008 Product data sheet 1. Product prole 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualied to the appropriate AEC standard for use in Automotive critical applications. 1.2 Features n Very low on-state resistance n Q101 compliant n 175 C rated n Standard level compatible 1.3 Applications n Automotive systems n General purpose power switching n Motors, lamps and solenoids n 12 V and 24 V loads 1.4 Quick reference data n E 351 mJ n R = 5.8 m (typ) DS(AL)S DSon n I 75 A n P 203 W D tot 2. Pinning information Table 1. Pinning Pin Description Simplied outline Symbol 1 gate (G) mb D 2 drain (D) 3 source (S) G mb mounting base connected to drain (D) mbb076 S 1 2 3 SOT226 (I2PAK)BUK7E07-55B NXP Semiconductors N-channel TrenchMOS standard level FET 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BUK7E07-55B I2PAK plastic single-ended package (I2PAK) low-prole 3-lead TO-220AB SOT226 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage -55 V DS V drain-gate voltage (DC) R =20k -55 V DGR GS V gate-source voltage - 20 V GS 1 I drain current T =25 C V = 10 V see Figure 2 and 3 - 119 A D mb GS 2 75 A 2 T = 100 C V = 10 V see Figure 2 -75 A mb GS I peak drain current T =25 C pulsed t 10 s see Figure 3 - 478 A DM mb p P total power dissipation T =25 C see Figure 1 - 203 W tot mb T storage temperature - 55 +175 C stg T junction temperature - 55 +175 C j Source-drain diode 2 I reverse drain current T =25 C -75 A DR mb I peak reverse drain current T =25 C pulsed t 10 s - 478 A DRM mb p Avalanche ruggedness E non-repetitive drain-source avalanche Unclamped inductive load I =75A - 351 mJ DS(AL)S D energy V 55 V V = 10 V R = 50 starting at DS GS GS T =25 C j 3 E repetitive drain-source avalanche Repetitive rating dened in Figure 16 --J DS(AL)R energy 1 Current is limited by chip power dissipation rating. 2 Continuous current is limited by package. 3 Conditions: a) Maximum value not quoted. b) Single-pulse avalanche rating limited by T of 175 C. j(max) c) Repetitive avalanche rating limited by an average junction temperature of 170 C. d) Refer to application note AN10273 for further information. BUK7E07-55B 1 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 29 January 2008 2 of 12