Product Information

BUK7675-100A,118

BUK7675-100A,118 electronic component of NXP

Datasheet
Trans MOSFET N-CH 100V 23A Automotive 3-Pin(2+Tab) D2PAK T/R
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

25: USD 1.3699 ea
Line Total: USD 34.25

0 - Global Stock
MOQ: 25  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
Packaging
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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Additional Infomation About Product

BUK7675-100A N-channel TrenchMOS standard level FET Rev. 02 31 July 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V =10V T =25C --23 A D GS mb see Figure 1 and 3 P total power T = 25 C see Figure 2 --99 W tot mb dissipation Avalanche ruggedness E non-repetitive I =14 A V 100 V - - 100 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Static characteristics R drain-source V =10V I =13A - - 187 m DSon GS D on-state resistance T = 175 C see Figure 12 j and 13 V =10V I =13A - 6475m GS D T = 25 C see Figure 12 j and 13Nexperia BUK7675-100A N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7675-100A D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads (one SOT404 lead cropped) Nexperia B.V. 2017. All rights reserved BUK7675-100A 2 Product data sheet Rev. 02 31 July 2009 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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