BUK7909-75ATE,127 NXP

BUK7909-75ATE N-channel TrenchPLUS standard level FET Rev. 02 16 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Allows responsive temperature Low conduction losses due to low monitoring due to integrated on-state resistance temperature sensor Q101 compliant Electrostatically robust due to Suitable for standard level gate drive integrated protection diodes sources 1.3 Applications Electrical Power Assisted Steering Variable Valve Timing for engines (EPAS) 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 75 V DS j j Static characteristics R drain-source V =10V I =50A - 89m DSon GS D on-state resistance T = 25 C see Figure 7 j see Figure 8 S temperature sense I =250 A T -55 C -1.4 -1.54 -1.68 mV/K F(TSD) F j diode temperature T 175 C j coefficient V temperature sense I =250 A T = 25 C 648 658 668 mV F(TSD) F j diode forward voltageNexperia BUK7909-75ATE N-channel TrenchPLUS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D A 2 A anode 3D drain G 4 K cathode 5S source mb D mounting base connected to S K mbl317 drain 13245 SOT263B (TO-220) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7909-75ATE TO-220 plastic single-ended package heatsink mounted 1 mounting hole 5-lead SOT263B TO-220 Nexperia B.V. 2017. All rights reserved BUK7909-75ATE 2 Product data sheet Rev. 02 16 February 2009 2 of 15