BUK9628-100A NXP

Philips Semiconductors Product specification TrenchMOS transistor BUK9528-100A Logic level FET BUK9628-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in V Drain-source voltage 100 V DS TO220AB and SOT404 . Using I Drain current (DC) 49 A D trench technology which features P Total power dissipation 166 W tot very low on-state resistance. It is T Junction temperature 175 C j intended for use in automotive and R Drain-source on-state DS(ON) general purpose switching resistance V = 5 V 28 m GS applications. V = 10 V 27 m GS PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab d mb 1 gate 2 drain 2 g 3 source 13 12 3 SOT404 TO220AB tab/mb drain s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Drain-source voltage - - 100 V DS V Drain-gate voltage R = 20 k - 100 V DGR GS V Gate-source voltage - - 10 V GS V Non-repetitive gate-source voltage t 50 S - 15 V GSM p I Drain current (DC) T = 25 C - 49 A D mb I Drain current (DC) T = 100 C - 34 A D mb I Drain current (pulse peak value) T = 25 C - 195 A DM mb P Total power dissipation T = 25 C - 166 W tot mb T , T Storage & operating temperature - - 55 175 C stg j THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R Thermal resistance junction to - - 0.9 K/W th j-mb mounting base R Thermal resistance junction to in free air 60 - K/W th j-a ambient(TO220AB) R Thermal resistance junction to Minimum footprint, FR4 50 - K/W th j-a ambient(SOT404) board March 2000 1 Rev 1.000Philips Semiconductors Product specification TrenchMOS transistor BUK9528-100A Logic level FET BUK9628-100A STATIC CHARACTERISTICS T= 25C unless otherwise specified j SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V Drain-source breakdown V = 0 V I = 0.25 mA 100 - - V (BR)DSS GS D voltage T = -55C 89 - - V j V Gate threshold voltage V = V I = 1 mA 1 1.5 2.0 V GS(TO) DS GS D T = 175C 0.5 - - V j T = -55C - - 2.3 V j I Zero gate voltage drain current V = 100 V V = 0 V - 0.05 10 A DSS DS GS T = 175C - - 500 A j I Gate source leakage current V = 10 V V = 0 V - 2 100 nA GSS GS DS R Drain-source on-state V = 5 V I = 25 A - 18.5 28 m DS(ON) GS D resistance T = 175C - - 70 m j V = 10 V I = 25 A - 17 27 m GS D V = 4.5 V I = 25 A - 18.8 31 m GS D DYNAMIC CHARACTERISTICS T = 25C unless otherwise specified mb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C Input capacitance V = 0 V V = 25 V f = 1 MHz - 3220 4293 pF iss GS DS C Output capacitance - 315 378 pF oss C Feedback capacitance - 187 256 pF rss t Turn-on delay time V = 30 V R =1.2 - 11 16 ns d on DD load t Turn-on rise time V = 5 V R = 10 - 5887ns r GS G t Turn-off delay time - 250 350 ns d off t Turn-off fall time - 106 148 ns f L Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH d from package to centre of die L Internal drain inductance Measured from contact screw on - 3.5 - nH d tab to centre of die(TO220AB) L Internal drain inductance Measured from upper edge of drain - 2.5 - nH d tab to centre of die(SOT404) L Internal source inductance Measured from source lead to - 7.5 - nH s source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T = 25C unless otherwise specified j SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I Continuous reverse drain - - 49 A DR current I Pulsed reverse drain current - - 195 A DRM V Diode forward voltage I = 25 A V = 0 V - 0.85 1.2 V SD F GS I = 49 A V = 0 V - 1.1 - V F GS t Reverse recovery time I = 49 A -dI /dt = 100 A/ s - 63 - ns rr F F Q Reverse recovery charge V = -10 V V = 30 V - 0.22 - C rr GS R March 2000 2 Rev 1.000