Product Information

BUK9840-55

BUK9840-55 electronic component of NXP

Datasheet
MOSFET, N CH 55V SOT223
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6009 ea
Line Total: USD 1.6

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.6009
25 : USD 0.573
100 : USD 0.3922
250 : USD 0.3346
1000 : USD 0.3104
4000 : USD 0.2894

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Packaging
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Current Id Max
Operating Temperature Min
Operating Temperature Range
Termination Type
Transistor Type
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
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Additional Infomation About Product

BUK9840-55 N-channel TrenchMOS logic level FET Rev. 03 20 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance Electrostatically robust due to integrated protection diodes 1.3 Applications Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150C --55 V DS j j I drain current T = 25 C - - 10.7 A D sp P total power dissipation T=25C --1.8 W tot amb Static characteristics R drain-source on-state V =5V I =5A T = 25 C - 30 40 m DSon GS D j resistance Avalanche ruggedness E non-repetitive I =3.6 A V 25 V R =50 --60 mJ DS(AL)S D sup GS drain-source V =5V T = 25 C unclamped GS j(init) avalanche energy SOT223BUK9840-55 NXP Semiconductors N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 4 2 D drain 3S source G 4 D drain 132 SOT223 (SOT223) S sym116 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9840-55 SOT223 plastic surface-mounted package with increased heatsink 4 SOT223 leads 4. Marking Table 4. Marking codes 1 Type number Marking code BUK9840-55 94055 1 % = placeholder for manufacturing site code BUK9840-55 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 03 20 April 2011 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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