X-On Electronics has gained recognition as a prominent supplier of BUK9Y58-75B MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9Y58-75B MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK9Y58-75B NXP

BUK9Y58-75B electronic component of NXP
BUK9Y58-75B NXP
BUK9Y58-75B MOSFETs
BUK9Y58-75B  Semiconductors

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Part No. BUK9Y58-75B
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 75V 20.73A Automotive 5-Pin(4+Tab) LFPAK
Datasheet: BUK9Y58-75B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
9: USD 4.1265 ea
Line Total: USD 37.14 
Availability - 0
MOQ: 9  Multiples: 1
Pack Size: 1
   
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Transistor Polarity
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Gate-Source Voltage Max
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We are delighted to provide the BUK9Y58-75B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9Y58-75B and other electronic components in the MOSFETs category and beyond.

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BUK9Y58-75B N-channel TrenchMOS logic level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads General purpose power switching Automotive systems solenoid drives DC-to-DC converters 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --75 V DS j j voltage I drain current V =5V T =25C --20.7 A D GS mb see Figure 1 see Figure 4 3 P total power T = 25 C see Figure 2 --60.4W tot mb dissipation Static characteristics R drain-source V =5V I =10A - 5258m DSon GS D on-state T =25C see Figure 13 j resistance V =10V I =10A - 4753m GS D T =25C jBUK9Y58-75B NXP Semiconductors N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I = 20.73 A V 75 V --34 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =10A -5 -nC GD GS D V =60 V T =25C DS j see Figure 14 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source D mb 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y58-75B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 BUK9Y58-75B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 7 April 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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