BYC10D-600,127 NXP

BYC10D-600 Hyperfast power diode Rev.02 - 23 February 2018 Product data sheet 1. General description Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features and benefits Low reverse recovery current and low thermal resistance Reduces switching losses in associated MOSFET 3. Applications Continuous Current Mode (CCM) Power Factor Correction (PFC) Half-bridge/full-bridge switched-mode power supplies Half-bridge lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 600 V RRM voltage I average forward current = 0.5 square-wave pulse T 93 C 10 A F(AV) mb Fig. 1 Fig. 2 I repetitive peak forward = 0.5 t = 25 s T 93 C 20 A FRM p mb current square-wave pulse I non-repetitive peak t = 10 ms T = 25 C sine-wave pulse 65 A FSM p j(init) forward current Fig. 3 t = 8.3 ms T = 25 C sine-wave pulse 71 A p j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 10 A T = 25 C Fig. 5 - 2 2.5 V F F j I = 10 A T = 150 C Fig. 5 - 1.4 1.8 V F j Dynamic characteristics t reverse recovery time I = 10 A V = 400 V dI /dt = 500 A/s - 18 - ns rr F R F T = 25 C Fig. 6 jWeEn Semiconductors BYC10D-600 Hyperfast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 K cathode 2 A anode K A 001aaa020 mb mb mounting base connected to cathode 1 2 TO-220AC (SOD59) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYC10D-600 TO-220AC plastic single-ended package heatsink mounted SOD59 1 mounting hole 2-lead TO-220AC 7. Marking Table 4. Marking codes Type number Marking codes BYC10D-600 BYC10D-600 BYC10D-600 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 23 February 2018 2 / 12