Product Information

BYC10DX-600,127

BYC10DX-600,127 electronic component of NXP

Datasheet
NXP Semiconductors Rectifiers PWR 600 V 10 A
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3811 ea
Line Total: USD 1.38

334 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
265 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.9528
10 : USD 0.7676
100 : USD 0.6229
500 : USD 0.5434
1000 : USD 0.4532
2000 : USD 0.4295
5000 : USD 0.4046
10000 : USD 0.401
25000 : USD 0.401

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Product
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BYC10DX-600 Hyperfast power diode Rev.02 - 26 September 2018 Product data sheet 1. General description Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits Isolated plastic package Low thermal resistance Low reverse recovery current Reduces switching losses in associated MOSFET 3. Applications Continuous Current Mode (CCM) Power Factor Correction (PFC) Half-bridge/full-bridge switched-mode power supplies Half-bridge lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 600 V RRM voltage I average forward current = 0.5 square-wave pulse T 41 C 10 A F(AV) h Fig. 1 Fig. 2 I repetitive peak forward = 0.5 t = 25 s T 41 C 20 A FRM p h current square-wave pulse I non-repetitive peak t = 10 ms T = 25 C sine-wave pulse 65 A FSM p j(init) forward current Fig. 3 t = 8.3 ms T = 25 C sine-wave pulse 71 A p j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 10 A T = 25 C Fig. 5 - 2 2.5 V F F j I = 10 A T = 150 C Fig. 5 - 1.4 1.8 V F j I = 20 A T = 150 C Fig. 5 - 1.7 2.2 V F j Dynamic characteristics t reverse recovery time I = 10 A V = 400 V dI /dt = 500 A/s - 18 - ns rr F R F T = 25 C Fig. 6 jWeEn Semiconductors BYC10DX-600 Hyperfast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 K cathode 2 A anode K A 001aaa020 mb n.c. mounting base isolated 1 2 SOD113 (2-lead TO-220F) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYC10DX-600 TO-220F plastic single-ended package isolated heatsink mounted SOD113 1 mounting hole 2-lead TO-220full pac 7. Marking Table 4. Marking codes Type number Marking codes BYC10DX-600 BYC10DX-600 BYC10DX-600 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 26 September 2018 2 / 12

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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