Product Information

HN1D02FU,LF

HN1D02FU,LF electronic component of Toshiba

Datasheet
Diodes - General Purpose, Power, Switching US6-M8,
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6138 ea
Line Total: USD 0.61

3767 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3423 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

HN1D02FU,LF
Toshiba

1 : USD 0.4212
10 : USD 0.2954
100 : USD 0.1222
1000 : USD 0.0937
3000 : USD 0.0772
9000 : USD 0.0676
24000 : USD 0.0676
45000 : USD 0.0605
99000 : USD 0.0593

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Vf - Forward Voltage
Series
Packaging
Pd - Power Dissipation
Height
Length
Width
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Additional Infomation About Product

HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Applicatio Unit: mm AEC-Q101 Qualified (Note1) HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF (3) = 0.90 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.9 pF (typ.) Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 300* mA FM Average forward current I 100* mA O US6 Surge current (10ms) I 2* A FSM JEDEC Power dissipation P (Note 4) 200 mW D JEITA T (Note 2) 150 j Junction temperature C TOSHIBA 1-2T1S T (Note 3) 125 j Weight: 6.8mg (typ.) T (Note 2) 55 to 150 stg Storage temperature C T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. 2 Note 4: Total rating, Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.32 mm 6). *: This is the Absolute Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4). In the case of using Unit 1 and Unit 2 independently or simultaneously, the Absolute Maximum Ratings per diode is 75% of the single diode one. Start of commercial production 1992-05 1 1992-2021 2021-06-25 Toshiba Electronic Devices & Storage Corporation HN1D02FU Electrical Characteristics (Q1, Q2, Q3, Q4 Common, Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.60 F (1) F Forward voltage VF (2) IF = 10 mA 0.72 V V I = 100 mA 0.90 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MHz 0.9 3.0 pF T R Reverse recovery time t I = 10 mA (fig.1) 1.6 4.0 ns rr F Pin Assignment Marking (Top View) Fig.1 Reverse Recovery Time (trr) Test Circuit 2 1992-2021 2021-06-25 Toshiba Electronic Devices & Storage Corporation

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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