BYC5X-600P NXP

BYC5X-600P Hyperfast power diode Rev.01 - 28 April 2018 Product data sheet 1. General description Hyperfast power diode in a SOD113A (2-lead TO-220F) plastic package. 2. Features and benefits Low reverse recovery current Low thermal resistance Low leakage current Reduces switching losses in associated MOSFET or IGBT 3. Applications Continuous Current Mode (CCM) Power Factor Correction (PFC) Half-bridge/full-bridge switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 600 V RRM voltage I average forward current = 0.5 square-wave pulse T 97 C 5 A F(AV) h Fig. 1 Fig. 2 Fig. 3 I repetitive peak forward = 0.5 t = 25 s T 97 C square-wave 10 A FRM p h current pulse I non-repetitive peak t = 10 ms T = 25 C sine-wave pulse 60 A FSM p j(init) forward current Fig. 4 t = 8.3 ms T = 25 C sine-wave pulse 65 A p j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 5 A T = 150 C Fig. 6 - 1.35 2.1 V F F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 200 A/s - 11 - ns rr F R F T = 25 C Fig. 7 jWeEn Semiconductors BYC5X-600P Hyperfast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 K cathode 2 A anode K A 001aaa020 mb n.c. mounting base isolated 1 2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYC5X-600P TO-220F plastic single-ended package isolated heatsink mounted SOD113A 1 mounting hole 2-lead TO-220Ffull pac 7. Marking Table 4. Marking codes Type number Marking codes BYC5X-600P BYC5X-600P BYC5X-600P All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 28 April 2018 2 / 10