Product Information

BYC8X-600P,127

BYC8X-600P,127 electronic component of NXP

Datasheet
Rectifiers Hyperfast power Diode
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1715 ea
Line Total: USD 1.17

3716 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5813 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8648
10 : USD 0.736
100 : USD 0.5106
500 : USD 0.4428
1000 : USD 0.3887
2000 : USD 0.3496
5000 : USD 0.3358
10000 : USD 0.3139

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Product
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BYC8X-600P Hyperfast power diode Rev.01 - 08 April 2019 Product data sheet 1. General description Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits Fast switching Isolated plastic package Low reverse recovery current Low leakage current Low thermal resistance Reduces switching losses in associated MOSFET 3. Applications Half-bridge/full-bridge switched-mode power supplies Continuous Current Mode (CCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Value Unit Absolute maximum rating V repetitive peak reverse DC 600 V R voltage I average forward current = 0.5 T 75 C square-wave pulse 8 A F(AV) h Fig. 1 Fig. 2 Fig. 3 I repetitive peak forward = 0.5 t = 25 s T 75 C 16 A FRM p h current square-wave pulse I non-repetitive peak t = 10 ms T = 25 C sine-wave pulse 91 A FSM p j(init) forward current Fig. 4 t = 8.3 ms T = 25 C sine-wave pulse 100 A p j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 8 A T = 25 C Fig. 6 - - 3.4 V F F j I = 8 A T = 125 C Fig. 6 - 1.5 1.9 V F j I = 8 A T = 150 C - 1.4 - V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 200 A/s - 12 18 ns rr F R F T = 25 C Fig. 7 j I = 8 A V = 400 V dI /dt = 500 A/s - 19 - ns F R F T = 25 C Fig. 7 jWeEn Semiconductors BYC8X-600P Hyperfast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 K cathode 2 A anode K A 001aaa020 mb n.c. mounting base isolated 1 2 SOD113 (2-lead TO-220F) 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date BYC8X-600P TO220F BYC8X-600PQ Tube 50 SOD113 28-Aug-2015 7. Marking Table 4. Marking codes Type number Marking codes BYC8X-600P BYC8X-600P BYC8X-600P All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2019. All rights reserved Product data sheet 08 April 2019 2 / 10

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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