Product Information

BYR29X-800,127

BYR29X-800,127 electronic component of NXP

Datasheet
NXP Semiconductors Diodes - General Purpose, Power, Switching Ultrafast Recovery Diodes 800V 8A
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6952 ea
Line Total: USD 1.7

7849 - Global Stock
Ships to you between
Mon. 20 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5675 - WHS 1


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1
1 : USD 1.196
10 : USD 0.9499
100 : USD 0.767
500 : USD 0.6658
1000 : USD 0.552
2000 : USD 0.5405
5000 : USD 0.5255
10000 : USD 0.5083
25000 : USD 0.5083

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BYR29X-800 Ultrafast power diode 19 October 2017 Product data sheet 1. General description Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits Fast switching Isolated plastic package Low forward voltage drop Soft recovery characteristic 3. Applications Discontinuous Current Mode (DCM) Power Factor Correction (PFC) High frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse voltage DC - - 800 V R I average forward = 0.5 T 73 C SQW Fig. 1 1 - - 8 A F(AV) h current Fig. 2 Fig. 3 I repetitive peak forward = 0.5 t = 25 s T 73 C SQW - - 16 A FRM p h current I non-repetitive peak t = 10 ms T = 25 C SIN - - 60 A FSM p j(init) forward current t = 8.3 ms T = 25 C SIN - - 66 A p j(init) Static characteristics V forward voltage I = 8 A T = 150 C Fig. 5 - 1.07 1.5 V F F j I = 20 A T = 25 C Fig. 5 - 1.75 1.95 V F j I = 8 A T = 25 C - - 1.7 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/s - 60 75 ns rr F R F T = 25 C Fig. 6 Fig. 7 j 1 Neglecting switching and reverse current lossesWeEn Semiconductors BYR29X-800 Ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode K A mb 001aaa020 2 A anode mb n.c. mounting base isolated 1 2 TO-220F (SOD113) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYR29X-800 TO-220F plastic single-ended package isolated heatsink mounted 1 SOD113 mounting hole 2-lead TO-220full pac BYR29X-800 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 19 October 2017 2 / 11

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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