BYR29-600,127 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BYR29 series Rectifier diodes ultrafast September 2018 Product specificationWeEn Semiconductors Product specification Rectifier diodes BYR29 series ultrafast FEATURES SYMBOL QUICK REFERENCE DATA Low forward volt drop V = 500 V/ 600 V/ 700 V / R Fast switching 800 V Soft recovery characteristic k a Reverse surge capability V 1.5 V F 001aaa020 High thermal cycling performance Low thermal resistance I = 8 A F(AV) t 75 ns rr GENERAL DESCRIPTION PINNING SOD59 (TO220AC) mb Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION intended for use as output rectifiers in high frequency switched mode 1 cathode power supplies. 2 anode The BYR29 series is supplied in the conventional leaded SOD59 tab cathode (TO220AC) package. 1 2 TO-220AC (SOD59) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYR29 -500 -600 -700 -800 V Peak repetitive reverse voltage - 500 600 700 800 V RRM V Crest working reverse voltage - 500 600 700 800 V RWM V Continuous reverse voltage - 500 600 700 800 V R 1 I Average forward current square wave - 8 A F(AV) = 0.5 T 115 C mb I Repetitive peak forward current t = 25 s = 0.5 - 16 A FRM T 115 C mb I Non-repetitive peak forward t = 10 ms - 60 A FSM current t = 8.3 ms - 66 A sinusoidal with reapplied V RRM(max) T Storage temperature -40 150 C stg T Operating junction temperature - 150 C j THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R Thermal resistance junction to - - 2.5 K/W th j-mb mounting base R Thermal resistance junction to in free air. - 60 - K/W th j-a ambient 1 Neglecting switching and reverse current losses September 2018 1 Rev 1.400