BYV44-500,127 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BYV44 series Dual rectifier diodes ultrafast Product specification October 1998NXP Semiconductors Product specification Dual rectifier diodes BYV44 series ultrafast FEATURES SYMBOL QUICK REFERENCE DATA Low forward volt drop V = 300 V/ 400 V/ 500 V R Fast switching a1 a2 Soft recovery characteristic V 1.12 V F 13 High thermal cycling performance Low thermal resistance I = 30 A O(AV) k 2 t 60 ns rr GENERAL DESCRIPTION PINNING SOT78 (TO220AB) Dual, common cathode, ultra-fast, PIN DESCRIPTION tab epitaxial rectifier diodes intended for use as output rectifiers in high 1 anode 1 frequency switched mode power supplies. 2 cathode The BYV44 series is supplied in the 3 anode 2 conventional leaded SOT78 (TO220AB) package. tab cathode 123 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYV44 -300 -400 -500 V Peak repetitive reverse voltage - 300 400 500 V RRM V Crest working reverse voltage - 300 400 500 V RWM V Continuous reverse voltage T 136C - 300 400 500 V R mb I Average rectified output current square wave = 0.5 - 30 A O(AV) 1 (both diodes conducting) T 94 C mb I Repetitive peak forward current t = 25 s = 0.5 - 30 A FRM per diode T 94 C mb I Non-repetitive peak forward t = 10 ms - 150 A FSM current per diode. t = 8.3 ms - 160 A sinusoidal with reapplied V RRM(max) T Storage temperature -40 150 C stg T Operating junction temperature - 150 C j THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R Thermal resistance junction to per diode - - 2.4 K/W th j-hs heatsink both diodes conducting - - 1.4 K/W R Thermal resistance junction to in free air. - 60 - K/W th j-a ambient 1 Neglecting switching and reverse current losses. For output currents in excess of 20 A, the cathode connection should be made to the metal mounting tab. October 1998 1 Rev 1.400