J109,126 NXP

DISCRETE SEMICONDUCTORS DATA SHEET J108 J109 J110 N-channel silicon junction FETs Product specication 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07Philips Semiconductors Product specication N-channel silicon junction FETs J108 J109 J110 FEATURES PINNING - TO-92 High speed switching PIN SYMBOL DESCRIPTION Interchangeability of drain and source connections 1 g gate Low R at zero gate voltage (<8 for J108). DSon 2 s source 3 d drain APPLICATIONS Analog switches Choppers and commutators. 1 handbook, halfpage 2 DESCRIPTION 3 d g s N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. MAM197 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V drain-source voltage - 25 V DS V gate-source cut-off voltage I =1 A V =5V GSoff D DS J108 - 3 - 10 V J109 - 2 -6V J110 - 0.5 -4V I drain current V = 0 V =5V DSS GS DS J108 80 - mA J109 40 - mA J110 10 - mA P total power dissipation up to T =50 C - 400 mW tot amb 1996 Jul 30 2