Document Number: MMA20312BV FreescaleSemiconductor Rev. 2, 9/2014 Technical Data HeterojunctionBipolarTransistor Technology(InGaPHBT) MMA20312BVT1 High Efficiency/Linearity Amplifier TheMMA20312BVisa2--stagehighefficiency,ClassABInGaPHBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It 1800--2200MHz,27.2dB is suitable for applications with frequencies from 1800 to 2200 MHz such as 30.5dBm CDMA,TD--SCDMA,PCS,UMTSandLTEatoperatingvoltages from3to5 V. InGaPHBTLINEARAMPLIFIER Theamplifier is housedinacost--effective, surfacemount QFN plastic package. Typical Performance: V =5Vdc,I =70mA,P =17dBm CC CQ out G ACPR PAE ps Frequency (dB) (dBc) (%) TestSignal 1880 MHz 29.0 --47.4 9.1 TD--SCDMA 1920 MHz 29.0 --46.7 9.0 TD--SCDMA QFN3 3 2010 MHz 27.4 --52.0 9.3 TD--SCDMA 2025 MHz 26.8 --50.0 9.5 TD--SCDMA 2140 MHz 27.0 --51.7 9.4 W--CDMA Features Frequency: 1800--2200 MHz P1dB: 30.5 dBm 2140 MHz (CW Application Circuit) Power Gain: 26.4 dB 2140 MHz (CW Application Circuit) OIP3: 44.5 dBm 2140 MHz (W--CDMA Application Circuit) Active Bias Control (adjustable externally) Single 3 to 5 V Supply Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. (1) Table1.TypicalPerformance Table2.MaximumRatings Rating Symbol Value Unit 1800 2140 2200 Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 6 V CC Small--Signal Gain G 28.8 26.4 25.5 dB p Supply Current I 550 mA CC (S21) RF Input Power P 14 dBm in Input Return Loss IRL --17.6 --10.9 --9.7 dB (S11) Storage Temperature Range T --65 to +150 C stg Output Return Loss ORL --20.3 --14.7 --13.7 dB Junction Temperature T 175 C J (S22) Power Output 1dB P1dB 30.5 30.5 30.5 dBm Compression 1. V =V =V =5Vdc,T =25 C, 50 ohm system, CC1 CC2 BIAS A CW Application Circuit Table3.ThermalCharacteristics (2) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 52 C/W JC Case Temperature 86C, V =V =V =5Vdc CC1 CC2 BIAS 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4.ElectricalCharacteristics (V =V =V =5 Vdc, 2140 MHz, T =25 C, 50 ohm system, in Freescale W--CDMA CC1 CC2 BIAS A Application Circuit) Characteristic Symbol Min Typ Max Unit (1) Small--Signal Gain (S21) G 23.6 27.2 dB p Input Return Loss (S11) IRL --10.7 dB Output Return Loss (S22) ORL --15.5 dB Power Output 1dB Compression, CW P1dB 28.2 dBm Third Order Output Intercept Point, Two--Tone CW OIP3 44.5 dBm Noise Figure NF 3.3 dB (1) Supply Current I 62.5 70 77 mA CQ Supply Voltage V 5 V CC Table5.ESDProtectionCharacteristics TestMethodology Class Human Body Model (per JESD22--A114) 0, rated to 150 V Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) III Table6.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C 1. Specified data is based on performance of soldered down part in W--CDMA application circuit. V V V BA2 CC1 CC1 V V V BA2 CC1 CC1 RF V out BA1 12 11 10 BIASBIAS CIRCUITCIRCUIT V BA119 RF out RF V out V BIAS 28 RF BIAS out RF V 37 CC2 in RF 45 6 V in CC2 GND GND GND GND GND GND Figure1.FunctionalBlockDiagram Figure2.PinConnections MMA20312BVT1 RF Device Data Freescale Semiconductor, Inc. 2