DocumentNumber:MMG20241H FreescaleSemiconductor Rev. 2, 9/2014 TechnicalData DriverorPre--driverAmplifier forDohertyPowerAmplifiers MMG20241HT1 GaAs Enhancement ModepHEMT TheMMG20241Hisa1/4Whighgainamplifierdesignedasadriveror pre--driverforDoherty power amplifiers in wireless infrastructure equipment operatinginthe450to3800MHz frequency range. Becauseof its versatile 4503800MHz,17.8dB 2655MHz design, the device may also be used in a variety of general purpose amplifier 24.5dBm applications, includingfrequencies below 450MHz andabove3800MHz. DRIVERAMPLIFIER Features P1dB: 24dBm 2655MHz Gain: 17.8dB 2655MHz Designedas aDoherty PA Driver or Pre--driver 5V SingleSupply, 78mA Current SOT--89Package 50Ohm OperationwithMinimalExternalMatching SOT--89 InTapeandReel. T1Suffix = 1,000Units, 12mm TapeWidth, 7--inchReel. (1) Table1.TypicalPerformance Characteristic Symbol 1915MHz 2140MHz 2350MHz 2595MHz 2655MHz 3700MHz Unit Small--SignalGain(S21) G 20 19.5 18 17.5 17.8 14.7 dB p PowerOutput 1dB Compression P1dB 24.5 24.5 23.8 24 23.9 24.1 dBm ThirdOrderOutputInterceptPoint OIP3 34.9 37 34.9 37.5 38 38.1 dBm InputReturnLoss (S11) IRL 19 24 12 14 14 17 dB OutputReturnLoss (S22) ORL 11 13 18 14 16 15 dB NoiseFigure NF 1.9 2 1.9 2.2 2.1 1.9 dB Table2.MaximumRatings Rating Symbol Value Unit Supply Voltage V 6 V DD Supply Current I 130 mA DD RFInputPower P 23 dBm in StorageTemperatureRange T 65to+150 C stg JunctionTemperature T 175 C J Table3.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 57 C/W JC CaseTemperature88C,5Vdc,85mA,noRFapplied 1. V =5Vdc,T =25 C,50ohmsystem,applicationcircuittunedforspecifiedfrequency. DD A 2. RefertoAN1955, Thermal Measurement Methodology of RF Power Amplifiers. GotoTable4.ElectricalCharacteristics (V =5Vdc,2140MHz,T =25 C,50ohmsystem,inFreescaleApplicationCircuit) DD A Characteristic Symbol Min Typ Max Unit Small--SignalGain(S21) G 18.4 19.5 dB p PowerOutput 1dB Compression P1dB 24.5 dBm ThirdOrderOutputInterceptPoint OIP3 37 dBm InputReturnLoss (S11) IRL 24 dB OutputReturnLoss (S22) ORL 13 dB NoiseFigure NF 2 dB Supply Current I 64 78 104 mA DD Supply Voltage V 5 V DD Table5.FunctionalPinDescription 2 Pin Number PinFunction 1 RF in 2 Ground 3 RF /DCSupply out 1 2 3 Figure1.FunctionalDiagram Table6.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1A MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) IV Table7.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 1 260 C MMG20241HT1 RF DeviceData FreescaleSemiconductor, Inc. 2