MMG38151BT1 NXP

MMG38151BT1 electronic component of NXP
MMG38151BT1 NXP
MMG38151BT1 RF Amplifier
MMG38151BT1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMG38151BT1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. MMG38151BT1 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

Part No. MMG38151BT1
Manufacturer: NXP
Category: RF Amplifier
Description: RF Amplifier InGaP HBT GPA, 0-6000 MHz, 19 dB, 16 dBm
Datasheet: MMG38151BT1 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.5296
10$ 3.0385
25$ 2.9238
50$ 2.8174
100$ 2.7027
250$ 2.457
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.542
10$ 2.852
100$ 2.7945
250$ 2.6105
1000$ 2.415
5000$ 2.07
10000$ 2.047
N/A

Obsolete
   
Manufacturer
Product Category
Mounting Style
Operating Supply Current
Packaging
Brand
Amplifier Type
Product
Number Of Channels
Shutdown
Topology
Cnhts
Gbp - Gain Bandwidth Product
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Supply Voltage - Max
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMG38151BT1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMG38151BT1 and other electronic components in the RF Amplifier category and beyond.

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DocumentNumber:MMG38151B FreescaleSemiconductor Rev. 1, 12/2014 Technical Data BTSDriver MMG38151BT1 BroadbandAmplifier TheMMG38151BT1 is a generalpurpose amplifierthat is internally input and output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable 06000MHz,17.1dB 3800MHz for applications with frequencies from 0 to 6000 MHz such as cellular, 13.4dBm PCS,BWA,WLL,PHS,CATV,VHF,UHF,UMTSandgeneralsmall-- BTSDriver signal RF. Features Frequency: 0 to 6000 MHz P1dB: 13.4dBm 3800MHz Small--Signal Gain: 17.1 dB 3800 MHz ThirdOrder Output Intercept Point: 25.0dBm 3800MHz Single 5 V Supply SOT--89 Internally Matchedto50Ohms Cost--effectiveSOT--89SurfaceMount Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. (1) Table1.TypicalPerformance Characteristic Symbol 900MHz 2140MHz 2700MHz 3800MHz Unit Small--SignalGain (S21) G 19.4 17.8 17.2 17.1 dB p Input Return Loss (S11) IRL --14.7 --16.8 --10.8 --11.0 dB Output Return Loss (S22) ORL --22.0 --10.4 --8.7 --14.4 dB PowerOutput 1dB Compression P1dB 18.4 15.8 15.0 13.4 dBm Third OrderOutput Intercept Point OIP3 31.8 27.9 27.0 25.0 dBm Table2.MaximumRatings Rating Symbol Value Unit Supply Voltage V 7 V CC Supply Current I 250 mA CC RFInput Power P 10 dBm in Storage Temperature Range T --65 to +150 C stg Junction Temperature T 175 C J Table3.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 57 C/W JC Case Temperature 85C, 5 Vdc, 50 mA, no RFapplied 1. V =5Vdc,T =25 C, 50ohm system. CC A 2. Referto AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4.ElectricalCharacteristics (V =5Vdc,900MHz,T =25 C, 50ohm system, inFreescaleApplicationCircuit) CC A Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 18 19.4 dB p Input Return Loss (S11) IRL --14.7 dB Output Return Loss (S22) ORL --22.0 dB PowerOutput 1dB Compression P1dB 18.4 dBm Third OrderOutput Intercept Point OIP3 31.8 dBm Noise Figure NF 3.2 dB Supply Current I 39 47 55 mA CC Supply Voltage V 5 V CC Table5.ESD ProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 1A MachineModel(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table6.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 1 260 C Table7.FunctionalPinDescription 2 Pin Number PinFunction 1 RF in 2 Ground 3 RF /DC Supply out 1 2 3 Figure1.FunctionalDiagram MMG38151BT1 RF DeviceData Freescale Semiconductor, Inc. 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
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