DocumentNumber:MML25231HT1 FreescaleSemiconductor Rev. 0, 4/2016 Technical Data EnhancementModepHEMT Technology(E--pHEMT) MML25231HT1 Low Noise Amplifier TheMML25231Hisasingle--stagelownoiseamplifier(LNA)withactive biasandhighisolationforuseincellularinfrastructureapplications.Itis designed for a range of low noise, high linearity applications such as picocell, femtocell, tower mounted amplifiers (TMA) and receiver front--end circuits. It 10004000MHz,15.2dB operatesfromasinglevoltagesupply andis suitableforapplicationswith 23dBm,0.36NF frequencies from 1000to4000MHz suchas CDMA, W--CDMA andLTE. E--pHEMTLNA Features Ultra Low Noise Figure: 0.39 dB 1900 MHz, 0.54 dB 2500 MHz High Linearity: 34.7 dBm OIP3 1900 MHz, 35.2 dBm 2500 MHz Frequency: 10004000 MHz Unconditionally Stable Over Temperature P1dB: 22.6 dBm 1900 MHz, 22.5 dBm 2500 MHz Small--Signal Gain: 17.2 dB 1900 MHz, 15.2 dB 2500 MHz DFN2 2 Single 5 V Supply Power--down Pin Supply Current: 60 mA (adjustable externally) 50 Ohm Operation (some external matching required) Cost--effective 8--pin, 2 mm DFN Surface Mount Plastic Package (1) Table1.TypicalPerformance Table2.MaximumRatings 1750 1920 2350 2600 3600 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz MHz MHz Unit Supply Voltage V 6 V DD Noise Figure NF 0.38 0.39 0.50 0.57 0.98 dB Supply Current I 150 mA DD Input Return IRL 12.0 12.8 15.1 15.9 10.7 dB RF Input Power P 20 dBm in Loss (S11) Storage Temperature Range T 65to+150 C stg Output Return ORL 14.4 14.4 14.8 15.3 20.7 dB Loss (S22) Junction Temperature T 175 C J Small-Signal GP 17.8 17.2 15.6 14.8 11.7 dB Gain (S21) Power Output P1dB 22.9 22.6 22.6 22.5 22.8 dBm 1dB Compression Third Order IIP3 16.5 17.5 19.3 20.7 25.1 dBm Input Intercept Point Third Order OIP3 34.4 34.7 35.0 35.7 37.0 dBm Output Intercept Point 1. V =5Vdc,T =25 C, 50 ohm system, application circuit DD A tuned for specified frequency. Table3.ThermalCharacteristics (3) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 134 C/W JC Case Temperature 87C, 5 Vdc, 65 mA, no RF applied 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4.ElectricalCharacteristics (V =5 Vdc, 2600 MHz, T =25 C, 50 ohm system, in Freescale Application Circuit) DD A Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) G 14.2 14.8 dB p Input Return Loss (S11) IRL 16.0 dB Output Return Loss (S22) ORL 15.3 dB Power Output 1dB Compression P1dB 22.5 dBm Third Order Input Intercept Point IIP3 20.7 dBm Reverse Isolation (S12) S12 20.9 dB Noise Figure NF 0.56 dB (1) Supply Current I 55 60 65 mA DD Supply Voltage V 5 V DD Supply Current in Power Down Mode I 2.8 mA PD (2) Logic Voltage for Power Down Input High Voltage V 1.8 V V PD DD Input Low Voltage 0 0.4 Table5.ESDProtectionCharacteristics TestMethodology Class Human Body Model (per JESD 22--A114) 1C Machine Model (per EIA/JESD 22--A115) A Charge Device Model (per JESD 22--C101) IV Table6.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 C Table7.OrderingInformation Device TapeandReelInformation Package MML25231HT1 T1 Suffix =1,000 Units, 12 mm Tape Width, 7--inch Reel DFN 2 2 1. DC current measured with no RF signal applied. 2. Limits derived from device characterization. Table8.FunctionalPinDescription Pin Number PinFunction 18 PowerDown V BIAS 1 V BIAS RF27 RF /V out DD in 2 RF GND in N.C.36 N.C. 3 No Connection 4 5 N.C. N.C. 4 No Connection (TopView) 5 No Connection Note: Exposedbacksideofthepackage 6 No Connection is DCandRF ground.N.C.canbe connectedtoGND. 7 RF /Supply Voltage out Figure1.PinConnections 8 Power Down (Active High) MML25231HT1 RF Device Data Freescale Semiconductor, Inc. 2